2SC4350SQ datasheet(2/4 Pages) PJSEMI

номер детали	2SC4350SQ

подробное описание детали	NPN Transistor

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производитель	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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2SC4350SQ

NPN Transistor

2 / 4

www.pingjingsemi.com

Revison：1.0 Jan-2019

Characteristics at Ta = 25℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at VCE = 2 V, IC = 100 mA

at VCE = 2 V, IC = 500 mA

at VCE = 2 V, IC = 1 A

at VCE = 2 V, IC = 2 A

at VCE = 2 V, IC = 3 A

hFE

300

Collector Base Cutoff Current

at VCB = 50 V, IE=0

ICBO

100

Emitter Base Cutoff Current

at VEB = 5 V, IC=0

IEBO

100

Collector Base Breakdown Voltage

at IC = 100 μA

V(BR)CBO

Collector Emitter Breakdown Voltage

at IC = 10 mA

V(BR)CEO

Emitter Base Breakdown Voltage

at IE = 100 μA

V(BR)EBO

Collector Emitter Saturation Voltage

at IC = 2 A, IB = 100 mA

at IC = 3 A, IB = 300 mA

VCE(sat)

280

Transition Frequency

at VCE = 5 V, IC =100 mA, f=100MHz

100

MHz

Output Capacitance

at VCB = 10 V, IE = 0, f = 1 MHz

Cob

Base Emitter Saturation Voltage

VBE(sat)

1.1

300

200

100

700

Collector Emitter Cutoff Current

at VCE = 50 V, VBE = 0 V

ICES

100

320

at IC = 2 A, IB = 100 mA

at IC = 3 A, IB = 300 mA

1.2

Base Emitter Turn-on Voltage

at VCE = 2 V, IC =1 A

VBE(on)

1.1

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