2SC3904SQ datasheet(2/4 Pages) PJSEMI

номер детали	2SC3904SQ

подробное описание детали	NPN Transistor

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производитель	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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2SC3904SQ

NPN Transistor

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www.pingjingsemi.com

Revision：1.0 Qct-2018

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

DC Current Gain

at VCE = 1 V, IC = 0.1 mA

at VCE = 1 V, IC = 1 mA

at VCE = 1 V, IC = 10 mA

at VCE = 1 V, IC = 50 mA

at VCE = 1 V, IC = 100 mA

hFE

100

300

Collector Base Cutoff Current

at VCB = 30 V

ICBO

Emitter Base Cutoff Current

at VEB = 6 V

IEBO

Collector Base Breakdown Voltage

at IC = 10 µA

V(BR)CBO

Collector Emitter Breakdown Voltage

at IC = 1 mA

V(BR)CEO

Emitter Base Breakdown Voltage

at IE = 10 µA

V(BR)EBO

Collector Emitter Saturation Voltage

at IC = 10 mA, IB = 1 mA

at IC = 50 mA, IB = 5 mA

VCE(sat)

0.2

0.3

Base Emitter Saturation Voltage

at IC = 10 mA, IB = 1 mA

at IC = 50 mA, IB = 5 mA

VBE(sat)

0.85

0.95

Gain Bandwidth Product

at VCE = 20 V, IC = 10 mA, f = 100 MHz

300

MHz

Collector Base Capacitance

at VCB = 5 V, f = 100 KHz

Cob

Delay Time

at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA

Rise Time

at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA

Storage Time

at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA

200

Fall Time

at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA

Min.

Unit

Max.

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