PJM3415PSC datasheet(2/6 Pages) PJSEMI

номер детали	PJM3415PSC

подробное описание детали	Silicon P-Channel Power MOSFET

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производитель	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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PJM3415PSC

Silicon P-Channel Power MOSFET

2 / 6

Electrical Characteristics (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Type

Max

Units

Static Characteristics

Drain-source breakdown voltage

-V(BR)DSS

VGS = 0V, ID =-250µA

Zero gate voltage drain current

-IDSS

VDS =-16V,VGS = 0V

µA

Gate-body leakage current

IGSS

VGS =±8V, VDS = 0V

±10

µA

Gate threshold voltage Note2

-VGS(th)

VDS =VGS, ID =-250µA

0.3

0.65

Drain-source on-resistance Note2

RDS(on)

VGS =-4.5V, ID =-4A

mΩ

VGS =-2.5V, ID =-4A

VGS =-1.8V, ID =-2A

Forward tranconductance Note2

gFS

VDS =-5V, ID =-4A

Dynamic characteristics

Input Capacitance

Ciss

VDS =-10V,VGS =0V,f=1MHz

1450

Output Capacitance

Coss

205

Reverse Transfer Capacitance

Crss

160

Switching Characteristics

Turn-on delay time

td(on)

VDS=-10V, VGS=-4.5V RGEN =3Ω,

RL=2.5Ω,

9.5

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

Total gate charge

VDS =-10V,VGS =-4.5V,ID =-4A

17.2

Gate-source charge

Qgs

1.3

Gate-drain charge

Qgd

4.5

Source-Drain Diode characteristics

Diode Forward voltage Note2

-VDS

VGS =0V, IS=-1A

Notes:1.

Surface mounted on FR4 board，t ≤ 10 sec.

2. Pulse Test : Pulse width≦3 00µs, duty cycle≦2 %.

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Revision：

1.0 Oct-2019

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