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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PJM80H04NTD датащи(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM80H04NTD датащи(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 6 page  PJM80H04NTD Silicon N-Channel Power MOSFET Features ⚫ Fast Switching ⚫ Low Gate Charge and RDS(on) ⚫ Low Reverse Transfer Capacitances TO-251 Applications Schematic diagram Absolute Maximum Ratings Ratings at TC = 25℃ unless otherwisespecified. Parameter Symbol Value Units Drain-to-Source Voltage VDS 800 V Gate-to-Source Voltage VGS ±30 V Continuous Drain Current ID 4 A TC = 100℃ 2.5 Pulsed Drain Current Note1 IDM 16 A Power Dissipation PD 70 W Operating Junction Temperature TJ 150 ℃ Storage TemperatureRange TSTG –55 to 150 ℃ Thermal Characteristics Parameter Symbol Value Units Thermal Resistance, Junction-to-Case RθJC 1.78 ℃/ W Thermal Resistance, Junction-to-Ambient RθJA 60 ℃/ W www.pingjingsemi.com Revision：1.0 Nov-2018 1 / 6 ⚫ Power switch circuit of adaptor and Charger 1 3 Gate Source 2 Drain G D S Single Pulse Avalanche Energy Note 2 EAS 650 mJ |
Аналогичный номер детали - PJM80H04NTD |
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Аналогичное описание - PJM80H04NTD |
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