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PJM20H02NSC датащи(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

номер детали PJM20H02NSC
подробное описание детали  N- Enhancement Mode Field Effect Transistor
PDF  6 Pages
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производитель  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
домашняя страница  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM20H02NSC датащи(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

  PJM20H02NSC Datasheet HTML 1Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM20H02NSC Datasheet HTML 2Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM20H02NSC Datasheet HTML 3Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM20H02NSC Datasheet HTML 4Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM20H02NSC Datasheet HTML 5Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM20H02NSC Datasheet HTML 6Page - Dongguan Pingjingsemi Technology Co., Ltd,  
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PJM20H02NSC
N- Enhancement Mode Field Effect Transistor
2 / 6
www.pingjingsemi.com
Revision：1.1 Dec-2018
www.pingjingsemi.com
Revision：1.1 Dec-2018
Electrical Characteristics
(TA=25℃ unless otherwise noted)
www.pingjingsemi.com
Revision：1.0 Jun-2019
Parameter
Symbol
Condition
Min Typ
Max
Unit
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V ID=250μA
200
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=200V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage Note3
VGS(th)
VDS=VGS,ID=250μA
1.2
-
3
V
Drain-Source On-State Resistance Note3
RDS(ON)
VGS=10V, ID=1.5A
-
-
700
mΩ
VGS=4.5V, ID=1A
-
-
900
mΩ
Dynamic Characteristics
Input Capacitance
Ciss
VDS=25V,VGS=0V,
f=1.0MHz
-
900
-
pF
Output Capacitance
Coss
-
130
-
pF
Reverse Transfer Capacitance
Crss
-
4.6
-
pF
Switching Characteristics
Turn-on Delay Time
td(on)
VDD=100V,ID=1.5A
VGS=10V,RGEN=3Ω
-
25
-
nS
Turn-on Rise Time
tr
-
36
-
nS
Turn-Off Delay Time
td(off)
-
48
-
nS
Turn-Off Fall Time
tf
-
14
-
nS
Total Gate Charge
Qg
VDS=160V,
ID=1.5A, VGS=10V
-
15
-
nC
Gate-Source Charge
Qgs
-
3
-
nC
Gate-Drain Charge
Qgd
-
5.2
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage Note 3
VSD
VGS=0V,IS=1.5A
-
-
1
V
Diode Forward Current Note 2
IS
-
-
1.5
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Static Characteristics
-



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