PJM05P30PA datasheet(2/5 Pages) PJSEMI

номер детали	PJM05P30PA

подробное описание детали	P-Enhancement Field Effect Transistor

PDF	5 Pages

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производитель	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

домашняя страница	http://www.pingjingsemi.com/MainEn/Main.aspx

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PJM05P30PA

P-Enhancement Field Effect Transistor

2 / 5

www.pingjingsemi.com

Revision：1.0 Nov-201

Electrical Characteristics (TC=25℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Type

Max

Unit

Static Characteristics

Drain-source breakdown voltage

-V(BR)DSS

VGS = 0V, -ID =250µA

Zero gate voltage drain current

-IDSS

-VDS =30V,VGS = 0V

µA

Gate-body leakage current

IGSS

VGS =±20V, VDS = 0V

±100

Gate threshold voltage Note3

-VGS(th)

VDS =VGS , -ID =250µA

Drain-source on-resistance Note3

RDS(on)

-VGS =10V, -ID =5.1A

mΩ

-VGS =4.5V, -ID =4.2A

mΩ

Forward transconductance Note3

gFS

-VDS =15V, -ID =5.1A

Dynamic characteristics

Input capacitance

Ciss

-VDS =15V, VGS =0V, f =1MHz

980

Output capacitance

Coss

390

Reverse transfer capacitance

Crss

135

Switching Characteristics

Total gate charge

-VDS =15V, -VGS =10V, -ID =5.1A

Gate-source charge

Qgs

Gate-drain charge

Qgd

2.8

Turn-on delay time

td(on)

-VDD=15V, -VGS=10V,

RGEN=6Ω, -ID=1A

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

Diode Characteristics

Diode Forward Voltage Note3

-VSD

VGS=0V, -IS=2.1A

1.2

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test : Pulse Width≤300μs, duty cycle ≤2%.

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