PJM2310NSA datasheet(2/6 Pages) PJSEMI

номер детали	PJM2310NSA

подробное описание детали	N-Enhancement Mode Field Effect Transistor

PDF	6 Pages

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производитель	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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Electrical Characteristics (TA=25℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Type

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID =250µA

Zero Gate Voltage Drain Current

IDSS

VDS =60V,VGS = 0V

µA

Gate-Body Leakage Current

IGSS

VGS =±20V, VDS = 0V

±100

Gate Threshold Voltage

Note3

VGS(th)

VDS =VGS, ID =250µA

Drain-Source On-Resistance

Note3

RDS(on)

VGS =10V, ID =3A

105

mΩ

VGS =4.5V, ID =3A

125

Forward Tranconductance

Note3

gFS

VDS =15V, ID =2A

1.4

2.5

Dynamic

Characteristics

Input Capacitance

Ciss

VDS =30V,VGS =0V,f =1MHz

250

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching CharacteristicsS

Total Gate Charge

VDS =30V,VGS =4.5V,ID =3A

Gate-Source Charge

Qgs

1.2

Gate-Drain Charge

Qgd

1.5

Turn-On Delay Time

td(on)

VGS=10V,VDD=30V,ID=1.5A,RGEN=1Ω

6.5

Turn-On Rise Time

15.2

Turn-Off Delay Time

td(off)

15.2

Turn-Off Fall Time

10.3

Source-Drain Diode characteristics

Body Diode Voltage

VSD

IS=3A,VGS=0V

0.8

1.2

Notes :

1. Repetitive rating : Pulse width limited by junction temperature.

2. Surface mounted on FR4 board , t≤10s.

3. Pulse Test : Pulse Width≤300μs, Duty Cycle≤0.5%.

PJM2310NSA

N- Enhancement Mode Field Effect Transistor

2 / 6

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Revision：1.1 Jan-2019

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