PJM02N60SA datasheet(2/7 Pages) PJSEMI

номер детали	PJM02N60SA

подробное описание детали	N- Enhancement Mode Field Effect Transistor

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производитель	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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Electrical Characteristics (TA=25℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Type

Max

Unit

tatic Characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID =250µA

Zero Gate Voltage Drain Current

IDSS

VDS =60V,VGS = 0V

µA

Gate-Body Leakage Current

IGSS

VGS =±20V, VDS = 0V

±100

Gate Threshold Voltage Note3

VGS(th)

VDS =VGS, ID =250µA

Drain-Source On-Resistance Note3

RDS(on)

VGS =10V, ID =3A

105

mΩ

VGS =4.5V, ID =2A

125

Forward Tranconductance Note3

gFS

VDS =15V, ID =2A

ynamic Characteristics

Input Capacitance

Ciss

VDS =30V,VGS =0V,f =1MHz

510

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

SWITCHING

Characteristics

Total Gate Charge

VDS =30V,ID =3A,VGS=4.5V

7.5

Gate-Source Charge

Qgs

1.4

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VGS=10V,VDD=30V,ID =1.5A ,RG=1Ω

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Source-Drain Diode characteristics

Body Diode Voltage

VSD

IS=3A,VGS=0V

1.2

Notes :

1. Repetitive rating : Pulse width limited by junction temperature.

3. Pulse Test : Pulse Width≤300μs, Duty Cycle≤2%.

2 / 7

PJM02 60SA

N- Enhancement Mode Field Effect Transistor

1.3

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

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Revision：2.0 May-2020

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