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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IXTY1R4N100P датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTY1R4N100P датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IXTY1R4N100P · FEATURES · Static drain-source on-resistance: RDS(on) ≤ 11.8Ω@VGS=10V · Fully characterized avalanche voltage and current · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATION · DC/DC Converter · Switch-Mode and Resonant-Mode Power Supplies · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 1.4 A IDM Drain Current-Single Pulsed 3.0 A PD Total Dissipation @TC=25℃ 63 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Junction-to-case thermal resistance 1.98 ℃ /W |
Аналогичный номер детали - IXTY1R4N100P |
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Аналогичное описание - IXTY1R4N100P |
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