2004 Aug 05

2

Philips Semiconductors

Product specification

NPN resistor-equipped transistor;

R1 = 10 k

Ω, R2 = 10 kΩ

PDTC114E series

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

QUICK REFERENCE DATA

DESCRIPTION

NPN resistor-equipped transistor (see “Simplified outline,

symbol and pinning” for package details).

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

collector-emitter

voltage

−

50

V

output current (DC)

−

100

mA

R1

bias resistor

10

−

k

Ω

R2

bias resistor

10

−

k

Ω

PRODUCT OVERVIEW

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

TYPE NUMBER

PACKAGE

MARKING CODE

PNP COMPLEMENT

PHILIPS

EIAJ

PDTC114EE

SOT416

SC-75

09

PDTA114EE

PDTC114EEF

SOT490

SC-89

09

PDTA114EEF

PDTC114EK

SOT346

SC-59

04

PDTA114EK

PDTC114EM

SOT883

SC-101

DS

PDTA114EM

PDTC114ES

SOT54 (TO-92)

SC-43

TC114E

PDTA114ES

PDTC114ET

SOT23

−

*16(1)

PDTA114ET

PDTC114EU

SOT323

SC-70

*09(1)

PDTA114EU