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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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OPA861IDBVT датащи(PDF) 3 Page - Texas Instruments |
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OPA861IDBVT датащи(HTML) 3 Page - Texas Instruments |
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3 / 28 page  www.ti.com ELECTRICAL CHARACTERISTICS: V S = ±5V OPA861 SBOS338 – AUGUST 2005 R L = 500Ω and RADJ = 250Ω, unless otherwise noted. OPA861ID, IDBV TYP MIN/MAX OVER TEMPERATURE 0 °C to –40 °C to MIN/ TEST PARAMETER CONDITIONS +25 °C +25 °C(2) 70°C(3) +85°C(3) UNITS MAX LEVEL(1) OTA — Open-Loop (see Figure 30) AC PERFORMANCE G = +5, VO = 200mVPP, Bandwidth 80 77 75 74 MHz min B RL = 500Ω G = +5, VO = 1VPP 80 MHz typ C G = +5, VO = 5VPP 80 MHz typ C Slew Rate G = +5, VO = 5V Step 900 860 850 840 V/µs min B Rise Time and Fall Time VO = 1V Step 4.4 ns typ C Harmonic Distortion G = +5, VO = 2VPP, 5MHz 2nd-Harmonic RL = 500Ω –68 –55 –54 –53 dB max B 3rd-Harmonic RL = 500Ω –57 –52 –51 –49 dB max B Base Input Voltage Noise f > 100kHz 2.4 3.0 3.3 3.4 nV/ √Hz max B Base Input Current Noise f > 100kHz 1.7 2.4 2.45 2.5 pA/ √Hz max B Emitter Input Current Noise f > 100kHz 5.2 15.3 16.6 17.5 pA/ √Hz max B OTA DC PERFORMANCE(4) (see Figure 30) Minimum OTA Transconductance (gm) VO = ±10mV, RC = 50Ω, RE = 0Ω 95 80 77 75 mA/V min A Maximum OTA Transconductance (gm) VO = ±10mV, RC = 50Ω, RE = 0Ω 95 150 155 160 mA/V max A B-Input Offset Voltage VB = 0V, RC = 0Ω, RE = 100Ω ±3 ±12 ±15 ±20 mV max A Average B-Input Offset Voltage Drift VB = 0V, RC = 0Ω, RE = 100Ω ±67 ±120 µV/°C max B B-Input Bias Current VB = 0V, RC = 0Ω, RE = 100Ω ±1 ±5 ±6 ±6.6 µA max A Average B-Input Bias Current Drift VB = 0V, RC = 0Ω, RE = 100Ω ±20 ±25 nA/°C max B E-Input Bias Current VB = 0V, VC = 0V ±30 ±100 ±125 ±140 µA max A Average E-Input Bias Current Drift VB = 0V, VC = 0V ±500 ±600 nA/°C max B C-Output Bias Current VB = 0V, VC = 0V ±5 ±18 ±30 ±38 µA max A Average C-Output Bias Current Drift VB = 0V, VC = 0V ±250 ±300 nA/°C max B OTA INPUT (see Figure 30) B-Input Voltage Range ±4.2 ±3.7 ±3.6 ±3.6 V min B B-Input Impedance 455 || 2.1 k Ω || pF typ C Min E-Input Resistance 10.5 12.5 13.0 13.3 Ω max B Max E-Input Resistance 10.5 6.7 6.5 6.3 Ω min B OTA OUTPUT E-Output Voltage Compliance IE = ±1mA ±4.2 ±3.7 ±3.6 ±3.6 V min A E-Output Current, Sinking/Sourcing VE = 0 ±15 ±10 ±9 ±9 mA min A C-Output Voltage Compliance IC = ±1mA ±4.7 ±4.0 ±3.9 ±3.9 V min A C-Output Current, Sinking/Sourcing VC = 0 ±15 ±10 ±9 ±9 mA min A C-Output Impedance 54 || 2 k Ω || pF typ C (1) Test levels: (A) 100% tested at 25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (2) Junction temperature = ambient for 25°C specifications. (3) Junction temperature = ambient at low temperature limit; junction temperature = ambient + 7°C at high temperature limit for over temperature specifications. (4) Current is considered positive out of node. 3 |
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