LPB8917DT0AG datasheet(1/6 Pages) LRC

номер детали	LPB8917DT0AG

подробное описание детали	P-Channel 150-V (D-S) MOSFET Low RDS(on) trench technology

PDF	6 Pages

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производитель	LRC [Leshan Radio Company]

домашняя страница	http://www.lrc.cn/

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1. FEATURES

●

Low RDS(on) trench technology

●

Low thermal impedance

●

Fast switching speed

●

We declare that the material of product compliance with

RoHS requirements and Halogen Free.

2. APPLICATIONS

●

Load Switches

●

DC/DC Conversion

●

Motor Drives

3. DEVICE MARKING AND ORDERING INFORMATION

4. MAXIMUM RATINGS(Ta = 25ºC)

5. THERMAL CHARACTERISTICS

1.Surface Mounted on 1” x 1” FR4 Board.

2.Pulse width limited by maximum junction temperature

Maximum Junction-to-Ambient (Note1)

t ≤10 s

RθJA

45

℃/W

Steady State

95

1.6

Operating Junction and Storage Temperature Range

TJ,Tstg

-55~+150

℃

Parameter

Symbol

Limits

Unit

Avalanche Energy(L=0.1mH)

EAS

9

mJ

Power Dissipation (Note1)

TA = 25℃

PD

2.4

W

TA = 70℃

IS

-0.5

Avalanche Current(L=0.1mH)

IAS

-8

±20

Continuous Drain Current (Note1)

TA = 25℃

ID

-3

LPB8917DT0AG

P-Channel 150-V (D-S) MOSFET

Device

Marking

Shipping

LPB8917DT0AG

A17

2000/Tape&Reel

A

TA = 70℃

-1.8

Pulsed Drain Current (Note2)

IDM

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

VDS

-150

V

Gate-Source Voltage

VGS

-12

Continuous Source Current (Diode Conduction) (Note1)

Leshan Radio Company, LTD.

1/6

DFN3333-8A

Rev.D Jun. 2020

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Аналогичное описание - LPB8917DT0AG

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Аналогичный номер детали - LPB8917DT0AG

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