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LP4935T1G датащи(PDF) 1 Page - Leshan Radio Company |
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LP4935T1G датащи(HTML) 1 Page - Leshan Radio Company |
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1 / 5 page ![]() 1. FEATURES ● Low RDS(on) trench technology. ● ● 2. ORDERING INFORMATION 3. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated) 1.Surface Mounted on 1” x 1” FR4 Board. 2. Repetitive rating, pulse width limited by junction temperature. 3.The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. 4. THERMAL CHARACTERISTICS ℃/W Unit Limits 50 RθJA Continuous Drain Current LP4935T1G P-Channel MOSFET Marking Shipping 4935 4000/Tape&Reel We declare that the material of product are Halogen Free and compliance with RoHS requirements. Device LP4935T1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Req uirements Drain−to−Source Voltage VDSS -30 V Gate−to−Source Voltage VGS ±20 V Parameter Symbol Limits Power Dissipation(Note 2) Operating Junction Temperature and Storage Temperature Range TJ , TSTG −55 ~+150 W Pulsed Drain Current (Note 3) IDM -30 ℃ 2.5 A TA =25°C -6.5 ID TA =25°C PD TA =70°C 1.9 -5 TA =70°C Typ Parameter Maximum Junction-to-Ambient(Note 1) Symbol Leshan Radio Company, LTD. 1/5 Top View Unit Rev.B Nov. 2019 |
Аналогичный номер детали - LP4935T1G |
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Аналогичное описание - LP4935T1G |
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