MJD200 MJD210

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain (1)

(IC = 500 mAdc, VCE = 1 Vdc)

(IC = 2 Adc, VCE = 1 Vdc)

(IC = 5 Adc, VCE = 2 Vdc)

hFE

70

45

10

—

180

—

—

Collector–Emitter Saturation Voltage (1)

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 2 Adc, IB = 200 mAdc)

(IC = 5 Adc, IB = 1 Adc)

VCE(sat)

—

—

—

0.3

0.75

1.8

Vdc

Base–Emitter Saturation Voltage (1) (IC = 5 Adc, IB = 1 Adc)

VBE(sat)

—

2.5

Vdc

Base–Emitter On Voltage (1) (IC = 2 Adc, VCE = 1 Vdc)

VBE(on)

—

1.6

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product (2)

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

fT

65

—

MHz

Output Capacitance

MJD200

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

MJD210

Cob

—

—

80

120

pF

(1) Pulse Test: Pulse Width = 300

µs, Duty Cycle [ 2%.

(2) fT = hfe• ftest.

25

25

Figure 1. Power Derating

T, TEMPERATURE (

°C)

0

50

75

100

125

150

15

10

TC

5

20

Figure 2. Switching Time Test Circuit

10K

IC, COLLECTOR CURRENT (AMPS)

10

5K

3K

2K

1K

500

300

200

100

50

1K

IC, COLLECTOR CURRENT (AMPS)

VCC = 30 V

IC/IB = 10

TJ = 25°C

500

300

200

100

50

td

30

20

10

5

2.5

0

1.5

1

TA

0.5

2

1

0.01

0.03 0.05

0.5

0.2

0.02

0.1

0.3

10

Figure 3. Turn–On Time

Figure 4. Turn–Off Time

+11 V

25

µs

0

– 9 V

RB

– 4 V

D1

SCOPE

VCC

+ 30 V

RC

tr, tf ≤ 10 ns

DUTY CYCLE = 1%

51

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

TC

TA (SURFACE MOUNT)

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

FOR PNP TEST CIRCUIT,

REVERSE ALL POLARITIES

3

2

5

2

1

3

tr

MJD200

MJD210

30

20

0.01

0.03 0.05

0.5

0.2

0.02

0.1

0.3

10

5

2

1

3

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

ts

tf

MJD200

MJD210