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TSM6866D датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

номер детали TSM6866D
подробное описание детали  20V Dual N-Channel MOSFET w/ESD Protected
PDF  4 Pages
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производитель  TSC [Taiwan Semiconductor Company, Ltd]
домашняя страница  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM6866D датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM6866D
2-2
2003/12 rev. A
Electrical Characteristics
Rate ID = 6.5A, (Ta = 25
oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
20
--
--
V
Drain-Source On-State Resistance
VGS = 4.5V, ID = 6.5A
RDS(ON)
--
22
28
Drain-Source On-State Resistance
VGS = 2.5V, ID = 5.5A
RDS(ON)
--
30
40
mΩ
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
0.5
1.0
--
V
Zero Gate Voltage Drain Current
VDS = 20V, VGS = 0V
IDSS
--
--
10
uA
Gate Body Leakage
VGS = ± 4.5V, VDS = 0V
IGSS
--
--
± 100
nA
Gate Body Leakage
VGS = ± 12V, VDS = 0V
IGSS
--
--
± 10
mA
On-State Drain Current
VGS = 4.5V, VDS >= 5V
ID(ON)
30
--
--
A
Forward Transconductance
VDS = 10V, ID = 6.5A
gfs
--
40
--
S
Dynamic
Total Gate Charge
Qg
--
12
--
Gate-Source Charge
Qgs
--
2
--
Gate-Drain Charge
VDS = 10V, ID = 6.5A,
VGS = 4.5V
Qgd
--
3.5
--
nC
Turn-On Delay Time
td(on)
--
75
100
Turn-On Rise Time
tr
--
125
150
Turn-Off Delay Time
td(off)
--
600
720
Turn-Off Fall Time
VDD = 10V, RL = 10Ω,
ID = 1A, VGEN = 4.5V,
RG = 6Ω
tf
--
300
360
nS
Input Capacitance
Ciss
--
870
--
Output Capacitance
Coss
--
320
--
Reverse Transfer Capacitance
VDS = 10V, VGS = 0V,
f = 1.0MHz
Crss
--
240
--
pF
Source-Drain Diode
Max. Diode Forward Current
IS
--
--
1.0
A
Diode Forward Voltage
IS = 1.0A, VGS = 0V
VSD
--
0.7
1.2
V
Note : pulse test: pulse width <=300uS, duty cycle <=2%



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