HM2809DR datasheet(2/5 Pages) HMSEMI

номер детали	HM2809DR

подробное описание детали	P-Channel 60V(D-S)

PDF	5 Pages

Scroll/Zoom	100%

производитель	HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]

домашняя страница	http://www.hmsemi.com/

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2 / 5 page

Jun, 2013-Ver1.1

Symbol

Parameter

Limit

Min Typ

Max

Unit

STATIC

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250μA

-60

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250μA

-1

2.5

IGSS

Gate Leakage Current

VDS=0V, VGS=±20V

±100

IDSS

Zero Gate Voltage Drain Current

VDS=-60V, VGS=0V

-10

RDS(ON)

Drain-Source On-Resistance

VGS=-10V, ID= -

2.2A

188

mΩ

VGS=-4.5V, ID= -1.4A

VSD

Diode Forward Voltage

IS=-1.2A, VGS=0V

-1.2

DYNAMIC

Total Gate Charge

VDS=-48, VGS=-4.5V, ID=-1A

6.3

Qgs

Gate-Source Charge

2.3

Qgd

Gate-Drain Charge

1.8

Gate Resistance

VDS=0V, VGS=0V,f=1MHz

9.8

td(on)

Turn-On Delay Time

VDS=-30V, RL =30Ω

RGEN=3.3Ω, VGS=-10V

ID=-1A

Turn-On Rise Time

33.1

td(off)

Turn-Off Delay Time

5.2

Turn-Off Fall Time

3.8

Ciss

Input Capacitance

VDS=-25V, VGS=0V,f=1MHz

364

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Notes: a. Based on epoxy or solder paste and bond wire Au or Cu 2mil×2(S), Au or Cu 2mil×1 (G) on each die of SOT-23 (SC-59) package.

b. Pulse test; pulse width ≦ 300us, duty cycle≦ 2%.

H&M SEMI reserves the right to improve product design, functions and reliability without notice.

Electrical Characteristics (Tj =25℃ Unless Otherwise Specified)

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

P-Channel 60V(D-S)

HM2809DR

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