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TSM2321 датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

номер детали TSM2321
подробное описание детали  -20V P-Channel Enhancement Mode MOSFET
PDF  5 Pages
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производитель  TSC [Taiwan Semiconductor Company, Ltd]
домашняя страница  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM2321 датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM2321
2-5
2005/06 rev. A
Electrical Characteristics
Ta = 25
oC, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = -250uA
BVDSS
-20
--
--
V
Drain-Source On-State Resistance
VGS = -4.5V, ID = -3.2A
RDS(ON)
--
50
65
Drain-Source On-State Resistance
VGS = -2.5V, ID = -2.0A
RDS(ON)
--
75
90
mΩ
Gate Threshold Voltage
VDS = VGS, ID = -250uA
VGS(TH)
-0.6
-0.9
-1.5
V
Zero Gate Voltage Drain Current
VDS = -16V, VGS = 0V
IDSS
--
--
-1.0
uA
Gate Body Leakage
VGS = ±10V, VDS = 0V
IGSS
--
--
±100
nA
On-State Drain Current
VDS = -5V, VGS = -4.5V
ID(ON)
-8
--
--
A
Forward Transconductance
VDS = -5V, ID = -3.2A
gfs
--
8
--
S
Dynamic
Total Gate Charge
Qg
--
7.4
--
Gate-Source Charge
Qgs
--
1.2
--
Gate-Drain Charge
VDS = -10V, ID = -3.2A,
VGS = -4.5V
Qgd
--
2.8
--
nC
Turn-On Delay Time
td(on)
--
13.9
Turn-On Rise Time
tr
--
7.1
Turn-Off Delay Time
td(off)
--
75.2
Turn-Off Fall Time
VDD = -10V, RL = 10Ω,
ID = -1A, VGEN = -4.5V,
RG = 6Ω
tf
--
54
nS
Input Capacitance
Ciss
--
610
--
Output Capacitance
Coss
--
155
--
Reverse Transfer Capacitance
VDS = -15V, VGS = 0V,
f = 1.0MHz
Crss
--
105
--
pF
Source-Drain Diode
Max. Diode Forward Current
IS
--
--
-1.6
A
Diode Forward Voltage
IS = - 1.6A, VGS = 0V
VSD
--
-0.78
-1.2
V
Note : pulse test: pulse width <=300uS, duty cycle <=2%



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