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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TSCD114D датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSCD114D датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page  TSCD114D 1-4 2003/12 rev. A TSCD114D NPN Digital Transistor Vcc = 50V Vin = - 6V ~ +40V Io = 70mA(max.) Features Build-in bias resistor enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. The also have the advantage of almost completely eliminating parasitic effects. Only the on/off conditions need to be set for operation, making device design easy. Two TSC114D chips in a SOT-363 package Transistor elements are independent, eliminating interference Complements the TSAD114D Ordering Information Part No. Packing Package TSCD114DCU6 Tape & Reel SOT-363 Note: the build-in resistor value type, option as No. Re (KΩ) R (KΩ) Marking TR 1 10 47 TR 2 10 47 7D Equivalent Circuit Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Supply Voltage Vcc 50 V Input Voltage Vin - 6 ~ +40 V DC 70 Output Current Pulse Io 100 mA Power Dissipation (note) PD 200 mW Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: 1. Single pulse, Pw = 300uS, Duty <= 2% 2. 150mW per element must not be exceeded. Pin assignment: 1. TR1 Gnd (Emitter) 2. TR1 Input (Base) 3. TR2 Output (Collector) 4. TR2 Gnd (Emitter) 5. TR2 Input (Base) 6. TR1 Output (Collector) |
Аналогичный номер детали - TSCD114D |
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Аналогичное описание - TSCD114D |
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