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IR2011SPBF датащи(PDF) 4 Page - Infineon Technologies AG

номер детали IR2011SPBF
подробное описание детали  High and Low Side Driver
PDF  18 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IR2011SPBF датащи(HTML) 4 Page - Infineon Technologies AG

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IR2011(S)PBF
4
www.irf.com
© 2015 International Rectifier
April 14, 2015
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V, CL = 1000pF and TA = 25°C unless otherwise specified. Figure 1 shows the timing
definitions.
Symbol
Definition
Min.
Typ.
Max.
Units
Test Conditions
ton
Turn-on propagation delay
80
ns
VS = 0V
toff
Turn-off propagation delay
75
VS = 200V
tr
Turn-on rise time
35
50
tf
Turn-off fall time
20
35
DM1
Turn-on delay matching
| ton (H) - ton (L) |
20
DM2
Turn-off delay matching
| toff (H) - toff (L) |
20
Static Electrical Characteristics
VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to
COM and are applicable to all logic input leads: HIN and LIN. The VO and IO parameters are referenced to COM
and are applicable to the respective output leads: HO or LO.
Symbol
Definition
Min.
Typ.
Max.
Units
Test Conditions
VIH
Logic “1” input voltage
2.2
V
VCC = 10V – 20V
VIL
Logic “0” input voltage
0.7
VOH
High level output voltage, VBIAS - VO
2.0
IO = 0A
VOL
Low level output voltage, VO
0.2
IO = 20mA
ILK
Offset supply leakage current
50
μA
VB = VS = 200V
IQBS
Quiescent VBS supply current
90
210
VIN = 0V or 3.3V
IQCC
Quiescent VCC supply current
140
230
IIN+
Logic “1” input bias current
7.0
20
VIN = 3.3V
IIN-
Logic “0” input bias current
1.0
VIN = 0V
VBSUV+
VBS supply undervoltage positive
going threshold
8.2
9.0
9.8
V
VBSUV-
VBS supply undervoltage negative
going threshold
7.4
8.2
9.0
VCCUV+
VCC supply undervoltage positive
going threshold
8.2
9.0
9.8
VCCUV-
VCC supply undervoltage negative
going threshold
7.4
8.2
9.0
IO+
Output high short circuit pulsed
current
1.0
A
VO = 0V,
PW ≤ 10 μs
IO-
Output low short circuit pulsed
current
1.0
VO = 15V
PW ≤ 10 μs



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