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FPD200P70 датащи(PDF) 2 Page - Filtronic Compound Semiconductors

номер детали FPD200P70
подробное описание детали  HI-FREQUENCY PACKAGED PHEMT
PDF  3 Pages
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производитель  FILTRONIC [Filtronic Compound Semiconductors]
домашняя страница  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FPD200P70 датащи(HTML) 2 Page - Filtronic Compound Semiconductors

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PRELIMINARY
FPD200P70
HI-FREQUENCY PACKAGED PHEMT
Phone: +1 408 850-5790
http://www.filtrionic.co.uk/semis
Revised: 7/15/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
ABSOLUTE MAXIMUM RATINGS1
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
VDS
-3V < VGS < +0V
8
V
Gate-Source Voltage
VGS
0V < VDS < +8V
-3
V
Drain-Source Current
IDS
For VDS > 2V
IDSS
mA
Gate Current
IG
Forward or reverse current
5
mA
RF Input Power2
PIN
Under any acceptable bias state
60
mW
Channel Operating Temperature
TCH
Under any acceptable bias state
175
ºC
Storage Temperature
TSTG
Non-Operating Storage
-40
150
ºC
Total Power Dissipation
PTOT
See De-Rating Note below
470
mW
Gain Compression
Comp.
Under any bias conditions
5
dB
Simultaneous Combination of Limits3
2 or more Max. Limits
80
%
1TAmbient = 22°C unless otherwise noted
2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where:
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
Total Power Dissipation to be de-rated as follows above 22
°C:
PTOT= 470mW – (3mW/°C) x TPACK
where TPACK = source tab lead temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 65
°C source lead temperature: PTOT = 470mW – (3 x (65 – 22)) = 341mW
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 0 (< 250V) per JESD22-A114-B, Human Body
Model, and Class A (< 200V) per JESD22-A115-A, Machine Model.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site. Evaluation Boards available upon request.



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