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FMS2020QFN датащи(PDF) 1 Page - Filtronic Compound Semiconductors |
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FMS2020QFN датащи(HTML) 1 Page - Filtronic Compound Semiconductors |
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1 / 6 page ![]() Preliminary Data Sheet 2.2 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email: sales@filcsi.com Website: www.filtronic.co.uk/semis FMS2020QFN GaAs Multi-Purpose Wide Band SPDT Switch Features: ♦ 3x3x0.9mm Packaged pHEMT Switch ♦ Suitable for L, S, and C-band digital cellular, cordless telephony and WLAN applications ♦ High isolation, 25dB typ at 2.5GHz ♦ Low insertion loss, 0.5dB typ at 2.5GHz ♦ Low insertion loss, 1.0dB typ at 6GHz ♦ P0.1dB > 38dBm at 2GHz Functional Schematic Description and Applications: The FMS2020QFN is a low loss, high power and linear single pole dual throw Gallium Arsenide antenna switch. The die is fabricated using the Filtronic FL05 0.5 µm switch process technology, which offers leading edge performance optimised for switch applications. The FMS2020QFN is designed for use in L, S, and C band wireless applications and WLAN access points where high linearity switching is required. Electrical Specifications: (T AMBIENT = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50Ω) Parameter Test Conditions Min Typ Max Units Insertion Loss 0.5 – 1.0 GHz 1.0 – 2.0 GHz 2.0 – 3.0 GHz 3.0 – 4.0 GHz 4.0 – 5.0 GHz 5.0 –6.0 GHz 0.4 0.45 0.55 0.65 0.75 0.95 dB dB dB dB dB dB Return Loss 0.5 – 2.5 GHz 2.5 – 5.0 GHz 23 18 dB dB Isolation 0.5 – 1.0 GHz 1.0 – 2.5 GHz 2.5 – 6.0 GHz 30 25 18 dB dB dB Input power at 0.1dB compression point 1.0 GHz 2.0 GHz 2.5 GHz 6.0 GHz >38 >38 >37 >33 dBm dBm dBm dBm 2nd Harmonic Level 1 GHz, Pin = +35 dBm, 100% Duty Cycle <-70 dBc 3rd Harmonic Level 1 GHz, Pin = +35 dBm, 100% Duty Cycle <-70 dBc Switching speed : T rise, T fall T on, T off 10% to 90% RF and 90% to 10% RF 50% control to 90% RF and 50% control to 10% RF <0.3 <1.0 µs µs Control Current +35dBm RF input @1GHz <10 µA Note: External DC blocking capacitors are required on all RF ports (typ: 100pF) All unused ports terminated in 50 Ω. ANT V1 RF1 V2 RF2 |
Аналогичный номер детали - FMS2020QFN |
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Аналогичное описание - FMS2020QFN |
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