Preliminary Data Sheet

2.1

1

Preliminary specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com

Contact Details (USA): Tel: +1 (408) 850-5790

Fax: +1 (408) 850-5766

Website: www.filtronic.com

FMS2016QFN-1

High Power Reflective GaAs SP4T Switch

Features:

♦ 3x3x0.9mm Packaged pHEMT Switch

♦ NiPdAu finish for Military and High

reliability applications

♦ Excellent low control voltage performance

♦ Excellent harmonic performance under

GSM/DCS/PCS/EDGE power levels

♦ Very high isolation: >29dB at 1.8GHz

♦ Very low Insertion loss: 0.65dB at 1.8GHz

♦ Very low control current

Functional Schematic

Description and Applications:

The FMS2016QFN is a low loss, high power and linear single pole four throw Gallium Arsenide

antenna switch designed for use in mobile handset applications. The die is fabricated using the

Filtronic FL05 0.5

µm switch process technology, which offers excellent performance optimised for

switch applications. The FMS2016QFN is designed for use in dual/tri and quad band GSM handset

antenna switch modules and RF front-end modules. It can also find use in other applications where

high power and linear RF switching is necessary.

Parameter

Test Conditions

Min

Typ

Max

Units

Insertion Loss

0.5 – 1.0 GHz

1.0 – 2.0 GHz

<0.55

<0.65

dB

dB

Return Loss

0.5 – 2.5 GHz

20

dB

Isolation

RF1 – RF3 and RF2 – RF4

0.5 – 1.0 GHz

1.0 – 2.0 GHz

34

32

dB

dB

Isolation

RF1 – RF2

0.5 – 1.0 GHz

1.0 – 2.0 GHz

34

32

dB

dB

Isolation

RF3 – RF4

0.5 – 1.0 GHz

1.0 – 2.0 GHz

34

30

dB

dB

2nd Harmonic Level

1 GHz, Pin = +35 dBm, 100% Duty Cycle

2 GHz, Pin = +35 dBm, 100% Duty Cycle

-75

-75

dBc

dBc

3rd Harmonic Level

1 GHz, Pin = +35 dBm, 100% Duty Cycle

2 GHz, Pin = +35 dBm, 100% Duty Cycle

-75

-75

dBc

dBc

Switching speed : Trise, Tfall

Ton, Toff

10% to 90% RF and 90% to 10% RF

50% control to 90% RF and 50% control to 10% RF

<0.3

1.0

µs

µs

Control Current

+35dBm RF input @1GHz

<10

µA

Note: External DC blocking capacitors are required on all RF ports (typ: 100pF)

ANT

RF1

RF3

RF2

RF4