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FMS2007QFN датащи(PDF) 1 Page - Filtronic Compound Semiconductors |
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FMS2007QFN датащи(HTML) 1 Page - Filtronic Compound Semiconductors |
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1 / 6 page ![]() Preliminary Data Sheet 2.1 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filtronic.co.uk/semis FMS2007QFN DC-6GHz DPDT Diversity Switch Features: ♦ 3x3x0.9mm Packaged pHEMT Switch ♦ Very High Tx-Rx isolation ♦ Suitable for WLAN 802.11a and 802.11b/g Applications ♦ Filtronic Advanced GaAs pHEMT Technology ♦ Low Insertion Loss ♦ Excellent low control voltage performance Description and Applications: The FMS2007QFN is a low loss linear Double-Pole Double-Throw dual band diversity switch designed for use in WLAN applications. The die is fabricated using the Filtronic FL05 0.5 µm switch process technology, which offers leading edge performance optimised for switch applications. Typical applications are for UNII, Hiperlan, 802.11a and 802.11b/g systems that employ two antennas for transmit and receive diversity. Electrical Specifications: (T AMBIENT = 25°C,Vcntrl = 0V/(2.4,3.3V), ZIN = ZOUT = 50Ω) Parameter Simulated Conditions Min Typ Max Units Insertion Loss 2.4GHz 0.9 dB Insertion Loss 6GHz 1.15 dB Return Loss 2.4GHz 18 dB Return Loss 6GHz 15 dB Tx-Rx Isolation 2.4GHz -37 dB Tx-Rx Isolation 6GHz -25 dB 2nd Harmonic Level 2.4, 6 GHz, Pin = 20dBm, Vctrl = 2.4V -70 dBc 3rd Harmonic Level 2.4, 6 GHz, Pin = 20dBm, Vctrl =2.4V -70 dBc Switching speed Vctrl=2.4V, Pin=20dBm 30 nS Note: External DC blocking capacitors are required on all RF ports (typ: 47pF) Functional Schematic V4 TX / RF1 V3 ANT1 RF3 ANT2 RF4 V1 RX / RF2 V2 |
Аналогичный номер детали - FMS2007QFN |
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Аналогичное описание - FMS2007QFN |
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