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FMA411 датащи(PDF) 2 Page - Filtronic Compound Semiconductors

номер детали FMA411
подробное описание детали  LOW-NOISE X-BAND MMIC
PDF  3 Pages
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производитель  FILTRONIC [Filtronic Compound Semiconductors]
домашняя страница  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FMA411 датащи(HTML) 2 Page - Filtronic Compound Semiconductors

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PRELIMINARY
FMA411
LOW-NOISE X-BAND MMIC
Phone: +1 408 850-5790
www.filcs.com
Revised: 7/19/04
Fax: +1 408 850-5766
Email: sales@filcsi.com
ABSOLUTE MAXIMUM RATINGS1
Parameter
Symbol
Test Conditions
Min
Max
Units
Supply Voltage
VDD
For any operating current
8
V
Supply Current
IDD
For VDD < 7V
75% IDSS
mA
RF Input Power
PIN
For standard bias conditions
0
dBm
Storage Temperature
TSTG
Non-Operating Storage
-40
150
ºC
Total Power Dissipation
PTOT
See De-Rating Note below
980
mW
Gain Compression
Comp.
Under any bias conditions
5
dB
Simultaneous Combination of Limits2
2 or more Max. Limits
80
%
1TAmbient = 22°C unless otherwise noted
2Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where:
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
Total Power Dissipation to be de-rated as follows above 22
°C:
PTOT= 0.6 - (0.004W/°C) x TCARRIER
where TCARRIER = carrier or heatsink temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 55
°C carrier temperature: PTOT = 0.6 - (0.004 x (55 – 22)) = 0.47W
For optimum heatsinking eutectic die attach is recommended; conductive epoxy die attach is acceptable with
some degradation in thermal de-rating performance (PTOT = 550mW)
Note on Thermal Resistivity: The nominal value of 250
°C/W is stated for the input stage, which will reach
temperature limits before the output stage. The aggregate MMIC thermal resistivity is approximately 175
°C/W.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.



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