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TPESD24BS3 датащи(PDF) 2 Page - TECH PUBLIC Electronics co LTD

номер детали TPESD24BS3
подробное описание детали  2 -L ine Bi -directional TVS Diode
PDF  4 Pages
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производитель  TECHPUBLIC [TECH PUBLIC Electronics co LTD]
домашняя страница  www.sot23.com.tw
Logo TECHPUBLIC - TECH PUBLIC Electronics co LTD

TPESD24BS3 датащи(HTML) 2 Page - TECH PUBLIC Electronics co LTD

  TPESD24BS3 Datasheet HTML 1Page - TECH PUBLIC Electronics co LTD TPESD24BS3 Datasheet HTML 2Page - TECH PUBLIC Electronics co LTD TPESD24BS3 Datasheet HTML 3Page - TECH PUBLIC Electronics co LTD TPESD24BS3 Datasheet HTML 4Page - TECH PUBLIC Electronics co LTD  
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Absolute Maximum Ratings
Electrical Characteristics
(Tamb=25°C unless otherwise specified)
(TA=25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Peak Pulse Power(8/20
µs)
Ppk
250
W
ESD per IEC 61000−4−2 (Air)
ESD per IEC 61000−4−2 (Contact)
VESD
±30
±30
kV
Operating Temperature Range
TJ
−55 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Symbol
Parameter
VRWM
Nominal Reverse Working Voltage
IR
Reverse Leakage Current @ VRWM
VBR
Reverse Breakdown Voltage @ IT
IT
Test Current for Reverse Breakdown
VC
Clamping Voltage @ IPP
IPP
Maximum Peak Pulse Current
CESD
Parasitic Capacitance
VR
Reverse Voltage
f
Small Signal Frequency
V
I
VRWM
VBR
VC
IPP
IR
IT
VRWM VBR VC
IPP
IR
IT
Bi-Directional TVS
2
TPESD24BS3
2-Line Bi
Bi -directional TVS Diode
2 -L ine
www.sot23.com.tw
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Working Voltage
VRWM
24
V
Breakdown Voltage
VBR
26.7
V
IT = 1mA
Reverse Leakage Current
IR
0.01
0.5
µA
VRWM = 24V
Clamping Voltage
VC
33
V
IPP = 1A (8 x 20µs pulse)
Clamping Voltage
VC
45
V
IPP =
3.5A (8 x 20µs pulse)
Peak Pulse Current
IPP
3.5
A
tP=8/20µs
Junction Capacitance
CJ
13
pF
VR=0, f=1MHz, Pin 1 to Pin 3 or
Pin 2 to Pin 3
TPESD24BS3
WWW.TPsemi.COM



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