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SEMICONDUCTOR

TECHNICAL DATA

FTC3356

Revision No : 0

DESCRIPTION

The FTC3356 is an NPN silicon epitaxial transistor designed for

low noise amplifier at VHF, UHF and CATV band.

It has dynamic range and good current characteristic.

FEATURES

• Low Noise and High Gain

• High Power Gain

Collector to Base Voltage

20

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3.0

V

Collector Current

100

mA

Total Power Dissipation

200

mW

Junction Temperature

150

C

Storage Temperature

65 to +150

C

• We declare that the material of product compliance with RoHS requirements.

ORDERING INFORMATION

Device

Marking

Shipping

FTC3356

3000/Tape & Reel

R24

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

1.0

A

Emitter Cutoff Current

1.0

A

DC Current Gain

82

170

270

Gain Bandwidth Product

7

GHz

Feed-Back Capacitance

0.55

1.0

pF

Insertion Power Gain

2

11.5

dB

V

B

d

0

.

2

1

.

1

F

N

e

r

u

g

i

F

e

s

i

o

N

CE

*

Pulse Measurement PW

350

s, Duty Cycle

2 %

* The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.

SOT–23

1

3

2