FTC4115M datasheet(1/1 Pages) FS

номер детали	FTC4115M

подробное описание детали	TRANSISTOR (NPN)

PDF	1 Pages

Scroll/Zoom	100%

производитель	FS [First Silicon Co., Ltd]

домашняя страница	http://www.firstsilicon.co.kr/

Logo

1 / 1 page

SEMICONDUCTOR

TECHNICAL D ATA

FTC4115M

2011. 12. 12

1/1

Revision No : 0

TO – 92M

1. EMITTER

2. COLLECTOR

3. BASE

FTC4115M TRANSISTOR (NPN)

FEATURES

Low VCE(sat).

Excellent Current Gain Characteristics.

Complements The FTA1585M.

MAXIMUM RATINGS (Ta=25

unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=0.05mA,IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=0.05mA,IC=0

6

V

Collector cut-off current

ICBO

VCB=30V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=2V, IC=100mA

120

560

Collector-emitter saturation voltage

VCE(sat)

*

IC=2A,IB=0.1A

0.5

V

Collector output capacitance

Cob

VCB=10V,IE=0, f=1MHz

25

pF

Transition frequency

fT

VCE=2V,IC=0.5A, f=100MHz

290

MHz

*Pulse test

CLASSIFICATION OF hFE

S

R

Q

K

N

A

R

RANGE

0

6

5

-

0

7

2

0

9

3

-

0

8

1

0

7

2

-

0

2

1

t

i

n

U

e

u

l

a

V

r

e

t

e

m

a

r

a

P

l

o

b

m

y

S

VCBO

V

0

4

e

g

a

t

l

o

V

e

s

a

B

-

r

o

t

c

e

ll

o

C

VCEO

V

0

2

e

g

a

t

l

o

V

r

e

t

i

m

E

-

r

o

t

c

e

ll

o

C

VEBO

V

6

e

g

a

t

l

o

V

e

s

a

B

-

r

e

t

i

m

E

IC

A

2

t

n

e

r

u

C

r

o

t

c

e

ll

o

C

PC

W

m

0

3

n

o

i

t

a

p

i

s

i

D

r

e

w

o

P

r

o

t

c

e

ll

o

C

RθJA

Thermal Resistance From Junction To Ambient

417

℃/W

Tj

0

5

1

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

J

℃

Tstg

0

5

1

+

~

5

-

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

℃

Аналогичный номер детали - FTC4115M

производитель	номер детали	датащи	подробное описание детали
Force Technologies Ltd	FTC41041	1Mb / 11P	HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
	FTC41041-10JCLF	1Mb / 11P	HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
	FTC41041-10JILF	1Mb / 11P	HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
	FTC41041-10JMLF	1Mb / 11P	HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
	FTC41041-12JCLF	1Mb / 11P	HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM

More results

Аналогичное описание - FTC4115M

производитель	номер детали	датащи	подробное описание детали
Unisonic Technologies	DTC114T	194Kb / 3P	NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR
Shenzhen Jin Yu Semicon...	2SC4944	850Kb / 1P	DUAL TRANSISTOR (NPN NPN)
Jiangsu Changjiang Elec...	BC847BV	3Mb / 3P	DUAL TRANSISTOR(NPN NPN)
	EMX18	776Kb / 3P	DUAL TRANSISTOR(NPNNPN)
	EMX1	3Mb / 4P	DUAL TRANSISTOR(NPNNPN)
	IMX2	5Mb / 4P	DUAL TRANSISTOR (NPNNPN)
	MMDT3904	1Mb / 4P	DUAL TRANSISTOR (NPNNPN)
	UMX2N	1Mb / 3P	DUAL TRANSISTOR (NPNNPN)
	UMX3N	3Mb / 4P	DUAL TRANSISTOR (NPNNPN)
Rectron Semiconductor	MMDT3904	263Kb / 5P	DUAL TRANSISTOR (NPNNPN)

More results

FTC4115M датащи(PDF) 1 Page - First Silicon Co., Ltd

FTC4115M датащи(HTML) 1 Page - First Silicon Co., Ltd

Аналогичный номер детали - FTC4115M

Аналогичное описание - FTC4115M

Html Pages

1

датащи скачать

ссылки URL