FTC3875 datasheet(1/3 Pages) FS

номер детали	FTC3875

подробное описание детали	GENERAL PURPOSE APPLICATION.

PDF	3 Pages

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производитель	FS [First Silicon Co., Ltd]

домашняя страница	http://www.firstsilicon.co.kr/

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2

EMITTER

3

COLLECTOR

1

BASE

2016. 09. 18

1/3

SEMICONDUCTOR

TECHNICAL DATA

FTC3875

Revision No : 0

1

3

2

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

Excellent hFE Linearity

: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).

High hFE : hFE=70 700.

Low Noise : NF=1dB(Typ.), 10dB(Max.).

Complementary to FTA1504.

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

150

mA

Base Current

IB

30

mA

Collector Power Dissipation

PC

150

mW

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55

150

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Note : hFE Classification

O:70

140,

Y:120

240,

GR(G):200

400,

BL(L):350

700

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=60V, IE=0

-

0.1

A

Emitter Cut-off Current

IEBO

VEB=5V, IC=0

-

0.1

A

DC Current Gain

hFE(Note)

VCE=6V, IC=2mA

70

-

700

Collector-Emitter Saturation Voltage

VCE(sat)

IC=100mA, IB=10mA

-

0.1

0.25

V

Base-Emitter Saturation Voltage

VBE(sat)

IC=100mA, IB=10mA

-

0.86

1.0

V

Transition Frequency

fT

VCE=10V, IC=1mA

80

-

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

-

2.0

3.5

pF

Noise Figure

NF

VCE=6V, IC=0.1mA

f=1kHz, Rg=10k

-

1.0

10

dB

h

Rank

Type Name

Marking

AL

FE

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