FTC3265 datasheet(1/3 Pages) FS

номер детали	FTC3265

подробное описание детали	General Purpose Transistors

PDF	3 Pages

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производитель	FS [First Silicon Co., Ltd]

домашняя страница	http://www.firstsilicon.co.kr/

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General Purpose Transistors

SOT– 23

2

EMITTER

3

COLLECTOR

1

BASE

2014. 01. 18

1/3

SEMICONDUCTOR

TECHNICAL DATA

FTC3265

Revision No : 0

1

3

2

LOW FREQUENCY POWER AMPLIFIER APPLICATION.

POWER SWITCHING APPLICATION.

FEATURES

High DC Current Gain : hFE=100~320.

Low Saturation Voltage

: VCE(sat)=0.4V(Max.) (IC=500mA, IB=20mA).

Suitable for Driver Stage of Small Motor.

Complementary to FTA1298.

Small Package.

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

V CBO

35

V

Collector-Emitter Voltage

V CEO

30

V

Emitter-Base Voltage

V EBO

5

V

Collector Current

IC

800

mA

Base Current

IB

160

mA

Collector Power Dissipation

PC

200

mW

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55~150

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

V CB=30V, IE=0

-

100

nA

Emitter Cut-off Current

IEBO

V EB=5V, IC=0

-

100

nA

Collector-Emitter Breakdown Voltage

V (BR)CEO

V EB=10mA, IB =0

30

-

V

Emitter-Base Breakdown Voltage

V (BR)EBO

IE=1mA, I C =0

5

-

V

DC Current Gain

hFE(1) (Note) V CE=1V, I C =100mA

100

-

320

hFE(2)

V CE=1V, IC=800mA

40

-

Collector-Emitter Saturation Voltage

V CE(sat)

IC=500mA, IB =20mA

-

0.5

V

Base-Emitter Voltage

V BE

V CE=1V, I C =10mA

0.5

-

0.8

V

Transition Frequency

fT

V CE=5V, I C =10mA, f=100MHz

-

120

-

MHz

Collector Output Capacitance

Cob

V CB=10V, IE =0, f=1MHz

-

13

-

pF

hFE(1) classifications、Marking：

hFE(1) Classifications

O

Y

hFE(1) Range

100～200

160～320

Marking

HK1O

HK1Y

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