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TPCP8402 датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали TPCP8402
подробное описание детали  TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
PDF  6 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
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TPCP8402 датащи(HTML) 2 Page - Toshiba Semiconductor

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TPCP8402
2003-09-26
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
Rth (ch-a) (1)
84.5
Thermal resistance,
channel to ambient
(t
= 5 s)
(Note 2a) Single-device value at
dual operation (Note 3b)
Rth (ch-a) (2)
101.6
°C/W
Single-device operation
(Note 3a)
Rth (ch-a) (1)
215.5
Thermal resistance,
channel to ambient
(t
= 5 s)
(Note 2b) Single-device value at
dual operation (Note 3b)
Rth (ch-a) (2)
347.2
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: P Channel: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −1.7 A
N Channel: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 2.1 A
Note 5: Repetitive rating; Pulse width limited by maximum channel temperature.
Note 6: Black round marking “●” locates on the left lower side of parts number marking “8402” indicates terminal
No. 1.
“*” shows lot number, which is a three digit number. The first digit number expresses the year of
manufacture: last decimel digit of the year of manufacture, the next two digit number expresses the week of
manufacture.
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(a)
25.4



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