SSM3J36FS datasheet(1/8 Pages) VBSEMI

номер детали	SSM3J36FS

подробное описание детали	P-Channel 20 V (D-S) MOSFET

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P-Channel 20 V (D-S) MOSFET

FEATURES

• TrenchFET® power MOSFET

• 100 % R tested

• Fast switching speed

APPLICATIONS

• Load / power switch for portable

devices

• Drivers: relays, solenoids, displays

• Battery operated systems

Notes

a. Maximum under steady state conditions is 650 °C/W.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

PRODUCT SUMMARY

VDS (V)

RDS(on) (

Ω)ID (A)

Qg (TYP.) (nC)

-20

0.450 at VGS = -4.5 V

-0.55

1

0.500 at VGS = -2.5 V

-0.50

0.600 at VGS = -1.8 V

-0.38

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

±

12

Continuous Drain Current (TJ = 150 °C)

TA = 25 °C

ID

-0.55 b, c

A

TA = 70 °C

-0.45 b, c

Pulsed Drain Current (t = 300 μs)

IDM

-1.8

Continuous Source-Drain Diode Current

TA = 25 °C

IS

-0.16 b, c

Maximum Power Dissipation

TA = 25 °C

PD

0.19 b, c

W

TA = 70 °C

0.12 b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +150

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum Junction-to-Ambient a, b

t

≤ 5 s

RthJA

440

530

°C/W

Steady State

540

650

S

G

D

P-Channel MOSFET

SC−75 / SOT−416

2

1

3

Top View

2

1

S

D

G

3

SSM3J36FS

1

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

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