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M28W320EB-ZB датащи(PDF) 34 Page - STMicroelectronics

номер детали M28W320EB-ZB
подробное описание детали  32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
PDF  45 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M28W320EB-ZB датащи(HTML) 34 Page - STMicroelectronics

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Table 25. CFI Query System Interface Information
Offset
Data
Description
Value
1Bh
0027h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
2.7V
1Ch
0036h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
3.6V
1Dh
00B4h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
11.4V
1Eh
00C6h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
12.6V
1Fh
0004h
Typical timeout per single word program = 2n µs
16µs
20h
0004h
Typical timeout for Double/ Quadruple Word Program = 2n µs
16µs
21h
000Ah
Typical timeout per individual block erase = 2n ms
1 s
22h
0000h
Typical timeout for full chip erase = 2n ms
NA
23h
0005h
Maximum timeout for word program = 2n times typical
512µs
24h
0005h
Maximum timeout for Double/ Quadruple Word Program = 2n times typical
512µs
25h
0003h
Maximum timeout per individual block erase = 2n times typical
8 s
26h
0000h
Maximum timeout for chip erase = 2n times typical
NA



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