CSD18534KCS datasheet(1/7 Pages) VBSEMI

номер детали	CSD18534KCS

подробное описание детали	N-Channel 60 V (D-S) MOSFET

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FEATURES

•

175 °C Junction Temperature

•

TrenchFET® Power MOSFET

• Material categorization:

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t

 10 s.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

a

60

0.0

at VGS = 10 V

0.00 at VGS = 7.5 V

100

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

VGS

± 20

V

Continuous Drain Current (TJ = 175 °C)

b

TC = 25 °C

ID

A

TC = 100 °C

9

Pulsed Drain Current

IDM

350

Continuous Source Current (Diode Conduction)

IS

70a

Avalanche Current

IAS

50

Single Avalanche Energy (Duty Cycle

 1 %)

L = 0.1 mH

EAS

125

mJ

Maximum Power Dissipation

TC = 25 °C

PD

136

W

TA = 25 °C

3b, 8.3b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

 10 sec

RthJA

15

18

°C/W

Steady State

40

50

Maximum Junction-to-Case

RthJC

0.85

1.1

N-Channel 60 V (D-S) MOSFET

120

05

8

TO-220AB

GD S

N-Channel MOSFET

G

D

S

0

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CSD18534KCS

1

Аналогичный номер детали - CSD18534KCS

производитель	номер детали	датащи	подробное описание детали
Texas Instruments	CSD18534KCS	843Kb / 8P	60-V, N-Channel NexFET Power MOSFETs
Inchange Semiconductor ...	CSD18534KCS	322Kb / 2P	isc N-Channel MOSFET Transistor
Texas Instruments	CSD18534KCS	1Mb / 14P	CSD18534KCS 60V N-Channel NexFET™ Power MOSFET REVISED MARCH 2024
Texas Instruments	CSD18534KCS.B	1Mb / 14P	CSD18534KCS 60V N-Channel NexFET™ Power MOSFET REVISED MARCH 2024

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Аналогичное описание - CSD18534KCS

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Аналогичный номер детали - CSD18534KCS

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