| поискавой системы для электроныых деталей |
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ISCNH194B датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCNH194B датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCNH194B · FEATURES · Static drain-source on-resistance: RDS(on) ≤34mΩ · Drain Source Voltage- : VDSS=75V(Min) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Hard switched and high frequency circuits · Automotive applications · Uninterruptible power supply · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 75 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 210 A IDM Pulse Drain Current 840 A PD Total Dissipation@TC=25℃ 330 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.455 ℃ /W |
Аналогичный номер детали - ISCNH194B |
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Аналогичное описание - ISCNH194B |
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