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PCF2129AT датащи(PDF) 59 Page - NXP Semiconductors |
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PCF2129AT датащи(HTML) 59 Page - NXP Semiconductors |
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59 / 86 page ![]() PCF2129 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 7 — 19 December 2014 59 of 86 NXP Semiconductors PCF2129 Accurate RTC with integrated quartz crystal for industrial applications 13. Static characteristics Table 79. Static characteristics VDD = 1.8 V to 4.2 V; VSS =0V; Tamb = 40 C to +85 C, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Supplies VDD supply voltage [1] 1.8- 4.2V VBAT battery supply voltage 1.8 - 4.2 V VDD(cal) calibration supply voltage - 3.3 - V Vlow low voltage - 1.2 - V IDD supply current interface active; supplied by VDD SPI-bus (fSCL = 6.5 MHz) - - 800 A I2C-bus (fSCL = 400 kHz) - - 200 A interface inactive (fSCL =0Hz)[2]; TCR[1:0] = 00 (see Table 13 on page 12) PWRMNG[2:0] = 111 (see Table 19 on page 16); TSOFF = 1 (see Table 58 on page 41); COF[2:0] = 111 (see Table 15 on page 14) VDD = 1.8 V - 470 - nA VDD = 3.3 V - 700 1500 nA VDD = 4.2 V - 800 - nA PWRMNG[2:0] = 111 (see Table 19 on page 16); TSOFF = 1 (see Table 58 on page 41); COF[2:0] = 000 (see Table 15 on page 14) VDD = 1.8 V - 560 - nA VDD = 3.3 V - 850 - nA VDD =4.2 V - 1050 - nA PWRMNG[2:0] = 000 (see Table 19 on page 16); TSOFF = 0 (see Table 58 on page 41); COF[2:0] = 111 (see Table 15 on page 14) VDD or VBAT =1.8 V [3] - 1750 - nA VDD or VBAT =3.3 V [3] - 2150 - nA VDD or VBAT =4.2 V [3] - 2350 3500 nA PWRMNG[2:0] = 000 (see Table 19 on page 16); TSOFF = 0 (see Table 58 on page 41); COF[2:0] = 000 (see Table 15 on page 14) VDD or VBAT =1.8 V [3] - 1840 - nA VDD or VBAT =3.3 V [3] - 2300 - nA VDD or VBAT =4.2 V [3] - 2600 - nA IL(bat) battery leakage current VDD is active supply; VBAT = 3.0 V - 50 100 nA |
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