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LMP7701 датащи(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
номер детали LMP7701
подробное описание детали  Precision, CMOS Input, RRIO, Wide Supply Range Amplifier
PDF  6 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
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±5V Electrical Characteristics (Note 4)
Unless otherwise specified, all limits are guaranteed for T
A = 25˚C, V
+ = 5V, V− = –5V,V
CM =0, and RL > 10 k
Ω to V
CM.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Units
V
OS
Input Offset Voltage
±37
±200
±500
µV
TCV
OS
Input Offset Voltage Drift
(Note 7)
±1
±5
µV/˚C
I
B
Input Bias Current
(Notes 7, 8)
0.3
10
300
pA
I
OS
Input Offset Current
40
fA
CMRR
Common Mode Rejection Ratio
–5V
≤ V
CM
≤ 5V
92
88
110
dB
PSRR
Power Supply Rejection Ratio
2.7V
≤ V+ ≤ 12V, Vo = V
CM
86
82
98
dB
CMVR
Input Common-Mode Voltage
Range
CMRR
≥ 80 dB
CMRR
≥ 78dB
–5.2
–5.2
5.2
5.2
V
A
VOL
Large Signal Voltage Gain
R
L =2k
Ω
V
O = –4.7V to 4.7V
100
98
121
dB
R
L =10k
Ω
V
O = –4.8V to 4.8V
100
98
134
V
O
Output Swing High
R
L =2k
Ω to V
CM
4.85
4.83
4.91
V
R
L =10k
Ω to V
CM
4.92
4.90
4.96
Output Swing Low
R
L =2k
Ω to V
CM
−4.91
−4.87
-4.85
V
R
L =10k
Ω to V
CM
−4.96
−4.95
-4.94
I
O
Output Short Circuit Current
(Notes 3, 9)
Sourcing V
O =–5V
V
IN = 100 mV
50
35
86
mA
Sinking V
O =5V
V
IN = −100 mV
50
35
84
I
S
Supply Current
0.790
1.1
1.3
mA
SR
Slew Rate (Note 10)
A
V = +1, VO =9VPP
10% to 90%
1.1
V/µs
GBW
Gain Bandwidth Product
2.5
MHz
THD+N
Total Harmonic Distortion + Noise
f = 1 kHz, Av = 1, R
L =1k
Ω
0.02
%
e
n
Input-Referred Voltage Noise
f = 1 kHz
12
nV/
i
n
Input-Referred Current Noise
f = 100 kHz
1
fA/
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics Tables.
Note 2: Human Body Model: 1.5 k
Ω in series with 100 pF. Machine Model: 0Ω in series with 200 pF.
Note 3: The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is
PD =(TJ(MAX) -TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
Note 4: Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device.
Note 5: Typical values represent the parametric norm at the time of characterization.
Note 6: Limits are 100% production tested at 25˚C. Limits over the operating temperature range are guaranteed through correlations using the Statistical Quality
Control (SQC) method.
Note 7: Guaranteed by design.
Note 8: Positive current corresponds to current flowing into the device.
Note 9: The short circuit test is a momentary test.
Note 10: The number specified is the slower of positive and negative slew rates.
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