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AM652X датащи(PDF) 136 Page - Texas Instruments

номер детали AM652X
подробное описание детали  Processors Silicon Revision 1.0
PDF  277 Pages
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
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AM652X датащи(HTML) 136 Page - Texas Instruments

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AM6548, AM6528, AM6546
AM6526, AM6527
SPRSP08I – NOVEMBER 2017 – REVISED DECEMBER 2019
www.ti.com
Submit Documentation Feedback
Product Folder Links: AM6548 AM6528 AM6546 AM6526 AM6527
Specifications
Copyright © 2017–2019, Texas Instruments Incorporated
Table 5-13. LVCMOS-FS Buffers DC Electrical Characteristics (continued)
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IIN
Input leakage current. This value represents
the maximum current flowing in or out of the
pin while the output driver is disabled and the
input is swept from VSS to VDD.
VI = VDDSHV0
45
µA
VI = VSS
1
µA
IOZ
Total leakage current through the
driver/receiver combination, which may
include an internal pull-up or pull-down. This
value represents the maximum current
flowing in or out of the pin while the output
driver is disabled, the pull-up or pull-down is
inhibited, and the input is swept from VSS to
VDD.
45
µA
(1) Voltage Input High Steady State (VIHSS) should be maintained when the signal is not transitioning.
(2) Voltage Input Low Steady State (VILSS) should be maintained when the signal is not transitioning.
5.6.1
USBHS Buffers DC Electrical Characteristics
NOTE
USB0 and USB1 Electrical Characteristics are compliant with Universal Serial Bus Revision
2.0 Specification dated April 27, 2000 including ECNs and Errata as applicable.
5.6.2
SERDES Buffers DC Electrical Characteristics
NOTE
The PCIe interfaces are compliant with the electrical parameters specified in PCI Express®
Base Specification Revision 3.1.
NOTE
USB0 instance is compliant with the USB3.1 SuperSpeed Transmitter and Receiver
Normative Electrical Parameters as defined in the Universal Serial Bus 3.1 Specification,
Revision 1.0, July 26, 2013.



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