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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFSL4510 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRFSL4510 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRFSL4510 · FEATURES · Static drain-source on-resistance: RDS(on) ≤13.5mΩ · Enhancement mode · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · reliable device for use in a wide variety of applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 62 A IDM Drain Current-Single Pulsed 250 A PD Total Dissipation @TC=25℃ 140 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1.05 ℃ /W |
Аналогичный номер детали - IRFSL4510 |
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Аналогичное описание - IRFSL4510 |
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ссылки URL |
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