2 - 4

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Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

4

6

S

C

iss

2800

pF

C

oss

V

GS

= 0 V, V

250

pF

C

rss

100

pF

t

d(on)

35

100

ns

t

r

V

GS

= 10 V, V

40

110

ns

t

d(off)

R

100

200

ns

t

f

60

100

ns

Q

g(on)

110

130

nC

Q

gs

V

GS

= 10 V, V

15

30

nC

Q

gd

50

70

nC

R

thJC

0.7

K/W

R

thCK

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

7

A

I

SM

Repetitive; pulse width limited by T

JM

28

A

V

SD

I

1.5

V

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

t

rr

T

250

ns

T

400

ns

Q

RM

T

0.5

mC

T

1.0

mC

I

RM

T

7.5

A

T

9.0

A

I

-di/dt = 100 A/

ms,

V

IXFH 7N80

IXFM 7N80

TO-247 AD (IXFH) Outline

Dim. Millimeter

Inches

Min.

Max.

Min.

Max.

A

19.81 20.32

0.780 0.800

B

20.80 21.46

0.819 0.845

C

15.75 16.26

0.610 0.640

D

3.55

3.65

0.140 0.144

E

4.32

5.49

0.170 0.216

F

5.4

6.2

0.212 0.244

G

1.65

2.13

0.065 0.084

H

-

4.5

-

0.177

J

1.0

1.4

0.040 0.055

K

10.8

11.0

0.426 0.433

L

4.7

5.3

0.185 0.209

M

0.4

0.8

0.016 0.031

N

1.5

2.49

0.087 0.102

TO-204 AA (IXFM) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

38.61 39.12

1.520 1.540

B

19.43 19.94

- 0.785

C

6.40

9.14

0.252 0.360

D

0.97

1.09

0.038 0.043

E

1.53

2.92

0.060 0.115

F

30.15

BSC

1.187

BSC

G

10.67 11.17

0.420 0.440

H

5.21

5.71

0.205 0.225

J

16.64 17.14

0.655 0.675

K

11.18 12.19

0.440 0.480

Q

3.84

4.19

0.151 0.165

R

25.16 25.90

0.991 1.020

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025