| поискавой системы для электроныых деталей |
|
A3979 датащи(PDF) 9 Page - Allegro MicroSystems |
|
|
|||||||||||||||||||||||||||||
A3979 датащи(HTML) 9 Page - Allegro MicroSystems |
|
9 / 15 page ![]() DMOS Microstepping Driver with Translator A3979 9 Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000 www.allegromicro.com Fixed Off-Time. The internal PWM current-control cir- cuitry uses a one-shot timer to control the duration of time that the MOSFETs remain off. The one shot off-time, tOFF, is determined by the selection of external resistors, RTx, and capacitors, CTx, connected from each RCx timing terminal to ground. The off-time, over a range of values of CT = 470 pF to 1500 pF and RT = 12 kΩ to 100 kΩ is approximated by: tOFF = RTCT RC Blanking. In addition to the fixed off-time of the PWM control circuit, the CTx component sets the compara- tor blanking time. This function blanks the output of the current-sense comparators when the outputs are switched by the internal current-control circuitry. The comparator outputs are blanked to prevent false overcurrent detection due to reverse recovery currents of the clamp diodes, or to switching transients related to the capacitance of the load. The blank time tBLANK can be approximated by: tBLANK = 1400CT Charge Pump (CP1 and CP2). The charge pump is used to generate a gate supply greater than that of VBB for driving the source-side DMOS gates. A 0.22 μF ceramic capacitor should be connected between CP1 and CP2 for pumping purposes. In addition, a 0.22 μF ceramic capacitor is required between VCP and VBB, to act as a reservoir for operating the high-side DMOS gates. VREG (VREG). This internally-generated voltage is used to operate the sink-side DMOS outputs. The VREG pin must be decoupled with a 0.22 μF capacitor to ground. VREG is internally monitored, and in the case of a fault condition, the DMOS outputs of the device are disabled. Enable Input (¯ E ¯¯ N ¯¯ A ¯¯ B ¯¯ L ¯¯ E ¯). This active-low input enables all of the DMOS outputs. When set to a logic high, the outputs are disabled. The inputs to the translator (STEP, DIR, MS1, and MS2), all remain active, independent of the ¯E¯¯N¯¯A¯¯B¯¯L¯¯E¯ input state. Shutdown. During normal operation, in the event of a fault, such as overtemperature (excess TJ) or an undervolt- age on VCP, the outputs of the device are disabled until the fault condition is removed. At power up, and in the event of low VDD, the undervoltage lockout (UVLO) circuit disables the drivers and resets the translator to the Home state. Sleep Mode ( ¯ S ¯¯ L ¯¯ E ¯¯ E ¯¯ P ¯). This active-low control input is used to minimize power consumption when the motor is not in use. It disables much of the internal circuitry includ- ing the output DMOS FETs, current regulator, and charge pump. Setting this to a logic high allows normal operation, as well as start-up (at which time the A3979 drives the motor to the Home microstep position). When bringing the device out of Sleep mode, in order to allow the charge pump (gate drive) to stabilize, provide a delay of 1 ms before issu- ing a step command signal on the STEP input. Percent Fast Decay Input (PFD). When a STEP input signal commands a lower output current than the previous step, it switches the output current decay to either Slow, Fast, or Mixed decay mode, depending on the voltage level at the PFD input. If the voltage at the PFD input is greater than 0.6 ×VDD, then Slow decay mode is selected. If the voltage on the PFD input is less than 0.21 ×VDD, then Fast decay mode is selected. Mixed decay mode is selected when VPFD is between these two levels, as described in the next section. This terminal should be decoupled with a 0.1 μF capacitor. Mixed Decay Operation. If the voltage on the PFD input is between 0.6 ×VDD and 0.21×VDD, the bridge operates in Mixed decay mode, as determined by the step sequence (shown in figures 2 through 5). As the trip point is reached, the device goes into Fast decay mode until the voltage on the RCx terminal decays to the same level as voltage applied to the PFD terminal. The time that the device oper- ates in fast decay is approximated by: tFD = RTCTln (0.6VDD/VPFD) After this Fast decay portion, the device switches to Slow decay mode for the remainder of the fixed off-time period. |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |