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BGA3012 датащи(PDF) 6 Page - NXP Semiconductors |
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BGA3012 датащи(HTML) 6 Page - NXP Semiconductors |
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6 / 15 page ![]() BGA3012 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 3 — 26 September 2013 6 of 15 NXP Semiconductors BGA3012 1 GHz 12 dB gain wideband amplifier MMIC [1] The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product (IM3) is 2 f 2 f1, where f2 =f1 6 MHz. Input power Pi = 20 dBm. [2] The fundamental frequencies (f1) and (f2) lay between 5 MHz and 300 MHz. The intermodulation product (IM2) is f 2 f1, with 40 MHz < f1-f2 < 300 MHz. Input power Pi = 20 dBm. Table 10. Characteristics at VCC = 5 V Bandwidth 5 MHz to 300 MHz; Tamb =25 C; typical values at VCC = 5 V; ZS =ZL =75 ; R1 = 100 ; R2 = 300 . Symbol Parameter Conditions Min Typ Max Unit VCC supply voltage RF input AC coupled 4.75 5 5.25 V ICC(tot) total supply current - 70 85 mA s 21 2 insertion power gain - 12 - dB SLsl slope straight line - 0.5 - dB FL flatness of frequency response - 0.5 - dB NF noise figure f = 50 MHz - 2.9 - dB RLin input return loss f = 5 MHz - 18.5 - dB f = 100 MHz - 18.5 - dB f = 200 MHz - 18.5 - dB f = 300 MHz - 18.5 - dB RLout output return loss f = 5 MHz - 18.5 - dB f = 100 MHz - 18.5 - dB f = 200 MHz - 18.5 - dB f = 300 MHz - 18.5 - dB PL(1dB) output power at 1 dB gain compression -17 -dBm IP3O output third-order intercept point [1] -40 -dBm IP2O output second-order intercept point [2] -55 -dBm |
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