CMBD1201 datasheet(2/3 Pages) CDIL

номер детали	CMBD1201

подробное описание детали	SILICON PLANAR EPITAXIAL HIGH SPEED DIODES

PDF	3 Pages

Scroll/Zoom	100%

производитель	CDIL [Continental Device India Limited]

домашняя страница	http://www.cdilsemi.com

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Continental Device India Limited

Data Sheet

Page 2 of 3

Reverse recovery time when switched from

IF = 10 mA to IR = 10 mA; RL = 100 Ω;

measured at IR = 1 mA

trr

4ns

RATINGS (per diode) (at TA = 25°C unless otherwise specified)

Limiting values

Continuous reverse voltage

max.

75 V

Repetitive peak reverse voltage

VRRM

max.

100 V

Repetitive peak forward current

IFRM

max.

500 mA

Forward current

max.

215 mA

Non-repetitive peak forward current (per crystal)

t = 1 µs

IFSM

max.

4 A

t = 1 ms

IFSM

max.

1.0 A

t = 1 s

IFSM

max.

0.5 A

Storage temperature

Tstg

–55 to +150 ° C

Junction temperature

max.

150 ° C

THERMAL RESISTANCE

From junction to ambient

Rth j–a

500 K/W

CHARACTERISTICS (per diode)

Tj = 25 °C unless otherwise specified

Forward voltage

IF = 10 mA

0.855 V

IF = 200 mA

1.05 V

IF = 10 mA

CMBD4148

1.0 V

Reverse currents

VR = 20 V

25 nA

VR = 75 V

5µA

VR = 25 V; Tj = 150 °C

30 µA

Forward recovery voltage

IF = 10 mA; tp = 20 ns

Vfr

1.75 V

Recovery charge

IF = 10 mA to VR = 5V; R = 100 Ω

<45 pC

Diode capacitance

VR = 0; f = 1 MHz

2pF

Reverse recovery time when switched from

IF = 10 mA to IR = 10 mA; RL = 100 Ω;

measured at IR = 1 mA

trr

4ns

CMBD1201, CMBD1202, CMBD1203

CMBD1204, CMBD1205, CMBD4148

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