| поискавой системы для электроныых деталей |
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SF11 датащи(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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SF11 датащи(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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1 / 2 page ![]() SUPER FAST RECTIFIER DN:T19820A0 https://www.microdiode.com Rev:2019A0 Page :1 Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere SF11 THRU SF18 Mechanical Data Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Idea for printed circuit board Super fast switching for high efficiency Low reverse leakage High forward surge current capability High temperature soldering guaranteed 250℃/ 10 seconds at terminals DO-41 Dimensions in inches and (millimeters) Case : JEDEC DO-41 Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.012 ounce, 0.33 grams Maximum Ratings And Electrical Characteristics 0.107(2.7) 0.080(2.0) DIA. 0.034(0.86) 0.028(0.70) DIA. 1.0 (25.4) MIN. 0.205(5.2) 0.166(4.2) 1.0 (25.4) MIN. Ratings at 25°C ambient temperature unlss otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS SF11 SF12 SF13 SF14 SF15 SF16 SF18 UNITS Marking Code MDD SF11 MDD SF12 MDD SF13 MDD SF14 MDD SF15 MDD SF16 MDD SF18 Maximum repetitive peak reverse voltage VRMM 50 100 150 200 300 400 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 600 V Maximum average forward rectified current at TA=55℃ I(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 30.0 A Maximum instantaneous forward voltage at 1.0A VF 0.95 1.25 1.7 V TA=25℃ Maximum DC reverse current at rated DC blocking voltage TA=1 00℃ IR 5.0 50.0 μA Maximum reverse recovery time (NOTE 1) trr 35 ns Typical junction capacitance (NOTE 2) CJ 15.0 10.0 pF Typical thermal resistance (NOTE 3) RθJA 60.0 ℃/ W Operating junction and storage temperature range TJ,TSTG -65 to +150 ℃ Note: 1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted |
Аналогичный номер детали - SF11_V01 |
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Аналогичное описание - SF11_V01 |
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