PMWD30UN datasheet(2/12 Pages) PHILIPS

номер детали	PMWD30UN

подробное описание детали	Dual uTrenchMOS ultra low level FET

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производитель	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

PMWD30UN

Dual

µTrenchMOS™ ultra low level FET

Product data

Rev. 01 — 22 January 2003

2 of 12

9397 750 10835

Limiting values

Table 2:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage (DC)

°C ≤ T

j ≤ 150 °C

VDGR

drain-gate voltage

°C ≤ T

j ≤ 150 °C; RGS =20kΩ

-30

VGS

gate-source voltage

±10

drain current (DC)

Tsp =25 °C; VGS = 4.5 V; Figure 2 and 3

-5

Tsp = 100 °C; VGS = 4.5 V; Figure 2

-3

IDM

peak drain current

Tsp =25 °C; pulsed; tp ≤ 10 µs; Figure 3

-18

Ptot

total power dissipation

Tsp =25 °C; Figure 1

2.3

Tstg

storage temperature

−55

+150

°C

junction temperature

−55

+150

°C

Source-drain diode

source (diode forward) current (DC)

Tsp =25 °C-

ISM

peak source (diode forward) current Tsp =25 °C; pulsed; tp ≤ 10 µs-

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