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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STPS20120CT датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STPS20120CT датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 Power Schottky Rectifier STPS20120CT FEATURES · Low Power Loss,high Efficiency · High Surge Capability,High Current Capability · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · For use in low voltage,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 120 V IF(RMS) RMS Forward current 30 A IF(AV) Average Forward Current per diode per device 10 20 A IFSM Nonrepetitive Peak Surge Current tp=10 ms sinusoidal 150 A TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMB OL PARAMETER MAX UNI T Rth j-c Thermal Resistance,Junction to Case 1.8 ℃ /W |
Аналогичный номер детали - STPS20120CT |
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Аналогичное описание - STPS20120CT |
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