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PSKT26/16 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали PSKT26/16
подробное описание детали  Thyristor Modules
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

PSKT26/16 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
PSKT26/16
Thyristor Modules
FEATURES
·
High frequency operation
·
Low forward voltage drop
·
Planar passivated chips
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
induction heating
·
Motor control
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VRRM
Repetitive Peak Reverse Voltage
1600
V
VDRM
Repetitive Peak Forward Blocking Voltage
1600
V
IT(AV)
Average Forward Current
Sinewave,180°conduction,Tc=85℃
25
A
ITSM
Peak, One-cycle,
Non-repetitive Surge Current
8.3 msec (60Hz),sine
700
A
Viso
Isolated Voltage
2500
V
TJ
Junction Temperature
-40~125
℃
Tstg
Storage Temperature Range
-40~125
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case,Per Module
0.44
℃
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VTM
Forward Voltage Drop
ITM = 80 A,TJ = 25 ℃
2
V
IDRM
IRRM
Peak Reverse and Off-state
Leakage Current
VD= VDRM
VR= VRRM,TJ = 125 ℃
5
mA
IGT
DC gate current required to trigger
VD= 6V,TJ = 25 ℃
100
mA
VGT
DC gate voltage required to trigger
1.6
V


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