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P89C60X2BA/00 датащи(PDF) 12 Page - NXP Semiconductors |
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P89C60X2BA/00 датащи(HTML) 12 Page - NXP Semiconductors |
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12 / 56 page ![]() Philips Semiconductors Product data P89C60X2/61X2 80C51 8-bit Flash microcontroller family 64KB Flash, 512B/1024B RAM 2003 Sep 11 12 FLASH EPROM MEMORY GENERAL DESCRIPTION The P89C60X2/61X2 Flash memory augments EPROM functionality with in-circuit electrical erasure and programming. The Flash can be read and written as bytes. The Chip Erase operation will erase the entire program memory. The Block Erase function can erase any Flash block. In-system programming (ISP) and standard parallel programming are both available. On-chip erase and write timing generation contribute to a user friendly programming interface. The P89C60X2/61X2 Flash reliably stores memory contents even after 10,000 erase and program cycles. The cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The P89C60X2/61X2 uses a +5 V VPP supply to perform the Program/Erase algorithms (12 V tolerant). FEATURES • Flash EPROM internal program memory with Block Erase. • Internal 1-kbyte fixed BootROM, containing low-level in-system programming routines and a default serial loader. • Loader in BootROM allows in-system programming via the serial port. • Up to 64 kbytes external program memory if the internal program memory is disabled (EA = 0). • Programming and erase voltage +5 V (+12 V tolerant). • Read/Programming/Erase using ISP: – Byte Programming (8 ms). – Typical erase times: Block Erase (4 kbytes) in 3 seconds. Full-chip erase in 15 seconds. • Parallel programming with 87C51 compatible hardware interface to programmer. • Programmable security for the code in the Flash. • 10,000 minimum erase/program cycles for each byte. • 10-year minimum data retention. FLASH PROGRAMMING AND ERASURE There are two methods of erasing or programming of the Flash memory that may be used. First, the on-chip ISP boot loader may be invoked. Second, the Flash may be programmed or erased using parallel method by using a commercially available EPROM programmer. The parallel programming method used by these devices is similar to that used by EPROM 87C51, but it is not identical, and the commercially available programmer will need to have support for these devices. FLASH MEMORY CHARACTERISTICS Flash User Code Memory Organization The P89C60X2/61X2 contains 64 kbytes Flash user code program memory organized into 4-kbyte blocks (see Figure 1). Boot ROM When the microcontroller programs its Flash memory during ISP, all of the low level details are handled by code that is contained in a 1 kbyte BootROM. BootROM operations include: erase block, program byte, verify byte, program security bit, etc. Clock Mode The clock mode feature sets operating frequency to be 1/12 or 1/6 of the oscillator frequency. The clock mode configuration bit, FX2, is located in the Security Block (See Table 1). FX2, when programmed, will override the SFR clock mode bit (X2) in the CKCON register. If FX2 is erased, then the SFR bit (X2) may be used to select between 6-clock and 12-clock mode. |
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