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MGSF2P02HD датащи(PDF) 2 Page - ON Semiconductor |
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MGSF2P02HD датащи(HTML) 2 Page - ON Semiconductor |
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2 / 8 page ![]() MGSF2P02HD http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Drain−to−Gate Voltage (RGS = 1.0 MΩ) VDGR 20 V Gate−to−Source Voltage VGS ±9 V Drain Current − Continuous Drain Current − Single Pulse (tp ≤ 10 ms) Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance − Junction to Ambient (Note 1.) ID IDM PD PD RqJA 1.3 10 400 210 312 A mW mW °C/W Drain Current − Continuous Drain Current − Single Pulse (tp ≤ 10 ms) Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance − Junction to Ambient (Note 2.) ID IDM PD PD RqJA 2.9 15 2.0 1.0 62.5 A W W °C/W Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Single Pulse Drain Source Avalanche Energy VDD = 20 V, VGS = 4.5 Vpk, IL = 3.6 Apk, L = 25 mH, RG = 25 W EAS 160 mJ THERMAL CHARACTERISTICS Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from Case for 5 seconds TL 260 °C 1. Minimum FR−4 or G−10 PCB, Operating to Steady State. 2. Mounted onto a 2 ″ square FR−4 Board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Operating time ≤5 seconds. |
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