CSD73O datasheet(1/3 Pages) CDIL

номер детали	CSD73O

подробное описание детали	NPN SILICON EPITAXIAL POWER TRANSISTOR

PDF	3 Pages

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производитель	CDIL [Continental Device India Limited]

домашняя страница	http://www.cdilsemi.com

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NPN SILICON EPITAXIAL POWER TRANSISTOR

CSD73

TO - 220

Plastic Package

Low Frequency High Power Amplifier

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector - Base Voltage

VCBO

100

V

Collector- Emitter Voltage

VCEO

60

V

Emitter- Base Voltage

VEBO

5V

Collector Current

IC

5A

Collector Dissipation(Tc=25°C )

PC

30

W

Operating & Storage Junction

Tj, Tstg

-55 to +150

ºC

Temperature Range

ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Collector - Base Voltage

VCBO

IC=1mA, IE=0

100

--

V

Collector- Emitter Voltage

VCEO

IC=20mA, IB=0

60

--

V

Collector- Base Voltage

VEBO

IE=1mA, IC=0

5

--

V

Collector Cut off Current

ICBO

VCB=100V, IE=0

--

5

mA

DC Current Gain

hFE

IC=1A, VCE=10V

70

-

240

Collector Emitter Saturation Voltage

VCE(sat)

IC=5A, IB=0.5A

-

2.0

V

Base Emitter Saturation Voltage

VBE(sat)

IC=5A, IB=0.5A

-

1.5

V

Base Emitter on Voltage

VBE(on) IC=1A, VCE=10V

-

0.75

-

V

Current Gain Bandwidth Product

fT

IC=0.3A, VCE=10V

-

20

-

MHz

Classification

O

Y

hFE

70 - 140

120 - 240

Continental Device India Limited

Data Sheet

1 of 3

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

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