PJM3018NSA

N- Enhancement Mode Field Effect Transistor

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Revision：1.0 Nov-2018

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Electrical Characteristics

℃, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static Parameters

Drain-Source Breakdown Voltage

30

-

-

V

Gate Leakage Current

-

-

±10

μA

Zero Gate Voltage Drain Current

-

-

1

μA

= 250μA

1

-

2

V

-

-

8

Ω

-

-

13

Ω

20

-

-

mS

Dynamic Parameters

Input Capacitance

-

13

-

pF

Output Capacitance

-

9

-

Reverse Transfer Capacitance

-

4

-

Switching Parameters

Turn-On Delay Time

-

15

-

ns

Turn-On Rise Time

-

35

-

Turn-Off Delay Time

-

80

-

Turn-Off Fall Time

-

80

-

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Pulse Test: Pulse width≤300μs, duty cycle≤2%.